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200V MOSFETs target light electric vehicles

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By Nick Flaherty

Magnachip Semiconductor in Korea has introduced its third-generation 200V Medium Voltage (MV) Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) for Light Electric Vehicles (LEV) motor controllers and industrial power supplies.

To maximize energy efficiency in power devices, the 200V MOSFETs incorporate third-generation trench MOSFET technology. The capacitance was reduced by 50% compared to the previous generation 100V MV MOSFET and the enhanced design of the core cell and termination helps lower RDS(on) and total gate charge to achieve a high figure of merit.

These third-generation MOSFETs are available in surface mount device TO-Leadless Package (TOLL), M2PAK and TO-220 of a through-hole type respectively to reduce product size and enhance heat dissipation.

The energy efficiency of these MOSFETs is greatly increased by fast switching and high power density. The guaranteed operating junction temperature from -55°C up to 175°C and a high level of avalanche ruggedness makes the devices suitable for LEV motor controllers and industrial power supplies requiring high efficiency and stable power supply.

“The development of advanced applications in the automotive and industrial sectors is driving the need for high-performance MV MOSFETs,” said YJ Kim, CEO of Magnachip. “Magnachip will continue to upgrade its MV MOSFET product line, ranging from 40V to 200V, which will enable our customers to strengthen their product competitiveness.”

Model

VDS [V]

RDS(on),max [mOhm] at VGS=10V

Package

MDT20N109PTRH

200V

10.9mΩ

TOLL

MDY20N113PTRH

200V

11.3mΩ

M2PAK

MDP20N116PTTH

200V

11.6mΩ

TO-220

www.magnachip.com

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