18 W GaN on SiC HEMT operates over DC to 6 GHz

New Products |
By eeNews Europe

The device is constructed with the company’s proven 0.25 µm production process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.

Typical application areas include test instrumentation, wideband power amplifiers, jammers, radar and avionics, professional and military radio. The devices feature a linear gain of over 10 dB at 6 GHz, operating voltage of 28 V and P3dB output power of 18 W at 6 GHz.

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