1200V SiC MOSFETs cut on resistance

1200V SiC MOSFETs cut on resistance
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Infineon Technologies has launched a 1200V silicon carbide device with significantly larger gate operation window that improves the on-resistance for a given die size. The CoolSiC MOSFET 1200 V M1H chip will be used in the Easy module family, along with discrete packages using .XT interconnect technology. The M1H chip…
By Nick Flaherty

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Infineon Technologies has launched a 1200V silicon carbide device with significantly larger gate operation window that improves the on-resistance for a given die size.

The CoolSiC MOSFET 1200 V M1H chip will be used in the Easy module family, along with discrete packages using .XT interconnect technology.

The M1H chip is aimed at solar energy systems, such as inverters that have to meet peak demand as well as fast EV charging, energy storage systems and other industrial applications.

The larger gate operation window also provides a high robustness against driver- and layout-related voltage peaks at the gate, without any restrictions even at higher switching frequencies.

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The housings and package variants have been adapted to support the new devices with higher power densities and more options for design engineers to improve on application performance.

The M1H will be integrated into the Easy family to further improve the Easy 1B and 2B modules as well as a new version of the Easy 3B module.

In addition to the Easy module family, the CoolSiC MOSFET 1200 V M1H portfolio includes new ultra-low on-resistances 7 mΩ, 14 mΩ and 20 mΩ in the TO247-3 and TO247-4 discrete packages. The new devices are easy to design-in, especially due to the gate voltage overshoots and undershoots with the new maximum gate-source voltage down to -10 V and come with avalanche and short-circuit capability specifications.

The maximum temporary junction temperature of 175°C and an increase in the overload capability enables higher power density and coverage of failure events. It also has the same dynamic behaviour as the M1 predecessor.

Infineon’s .XT interconnection technology, previously introduced in the D 2PAK-7L package, is now also implemented in a TO-footprint. The thermal dissipation capabilities are enhanced by more than 30 percent compared to a standard interconnection. As a result, such thermal benefit can be used to increase the output power of up to 15 percent.

This can also be used to increase the switching frequency to further reduce the passive components in  electric vehicle (EV) charging, energy storage or photovoltaic systems for enhanced power density and reduced system cost. Without changing the system operating conditions, the .XT technology will lower the SiC MOSFET junction temperature, therefore significantly increasing the system lifetime and power cycling capabilities. This is a key requirement in applications such as servo drives.

The module and discrete variants can be ordered now.

www.infineon.com/sic-mosfet

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