The seventh-generation IGBT deploys carrier-stored trench-gate bipolar transistor (CSTBT) structure to achieve a current rating of 75A for the DIPIPM. The footprint and pin configuration is compatible with existing 1200V Large DIPIPM Ver. 6 to simplify higher power inverter designs, and fewer external components are needed from the embedded bootstrap diode (BSD) with current-limiting resistor. A high-accuracy analogue temperature output voltage simplifies thermal design.
The module measures 31.0×79.0×8.0mm, the same as 1200V Large DIPIPM Ver. 4 series.