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1200V/75A power module targets 40kW applications

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By Nick Flaherty

The seventh-generation IGBT deploys carrier-stored trench-gate bipolar transistor (CSTBT) structure to achieve a current rating of 75A for the DIPIPM. The footprint and pin configuration is compatible with existing 1200V Large DIPIPM Ver. 6 to simplify higher power inverter designs, and fewer external components are needed from the embedded bootstrap diode (BSD) with current-limiting resistor. A high-accuracy analogue temperature output voltage simplifies thermal design.

The module measures 31.0×79.0×8.0mm, the same as 1200V Large DIPIPM Ver. 4 series.

www.mitsubishielectric.com

 


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