Rising commercial pressures and shortening windows of opportunity mean that electric vehicle (EV) charging infrastructure must be developed inside the shortest possible timeframe. Often this must be done with allocation of only limited engineering resources. An informative new Toshiba white paper describes the company’s 3-phase 400VAC power-factor corrected (PFC) reference design. It explains how the silicon carbide (SiC) MOSFET technology employed allows the latest EV charging requirements to be addressed, in terms of higher power densities and elevated conversion efficiency levels. Through utilisation of this reference design, all the necessary development work can be undertaken at an accelerated pace - moving quickly from the concept phase through to initial prototypes, then reaching a finalised implementation.