SOI 650V driver integrates bootstrap diodes

November 06, 2018 // By Nick Flaherty
Infineon Technologies has launched a half-bridge, 650 V rated driver using silicon-on-insulator (SOI) process technology that integrates a bootstrap diode for higher reliability.

The 2ED2304S06F provides negative VS transient immunity, monolithic integration of a real diode for bootstrap, and higher latch-up immunity. Combined with higher frequency switching, this allows more robust, reliable, smaller systems and reduce BOM cost in home appliances, low power drives, and other general inverterised motor drive applications below 1 kW.

The EiceDRIVER 2ED supports typical source and sink currents of 360 mA and 700 mA, respectively, with 310 ns and 300 ns propagation delays. It is a perfect match for IGBT and MOSFET switches rated up to 650 V. The integrated bootstrap diode offers ultra-fast reverse recovery with a typical 36 Ω on-resistance. Negative transient voltage (VS) immunity of -100 V with repeating pulses provides superior robustness and reliable motor operation. Additional safety features include integrated dead time with cross-conduction prevention logic and independent under-voltage lockout (UVLO) for high and low side voltage supplies.

The half-bridge gate driver is an electrically and functionally drop-in replacement for earlier generation devices IR2304SPBF and IRS2304SPBF. It is available in industry standard DSO-8 (SOIC8) package and is in production now.

www.infineon.com/EiceDRIVER

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