In the Horizon 2020 EU Research and Innovation programme, 11 key European participants are collaborating on the four year GaNonCMOS project to develop cost-effective and reliable GaN-based processes, components, modules and integration approaches.
In particular, the project aims to exploit the energy-efficiency advantages of GaN, targeting the production of several demonstrators with GaN power switches and CMOS drivers, as well as new magnetic core materials that will enable switching frequencies up to 200 MHz. Together with optimized embedded PCB technology, the developments should lead to new integrated power components for low-cost, high-reliability systems. Working alongside Austrian board maker AT&S are the University of Leuven, Epigan, Fraunhofer, IBM Research, IHP, Tyndall National Institute, PNO Innovation, Recom, NXP Semiconductors and X-FAB Semiconductor.
The first meeting of the project took place on 24th January 2017. The project aims to bring GaN power electronic materials, devices and systems to the next level of maturity by providing the most densely integration achievable, to build a new generation of densely integrated power electronics and highly reliable systems for energy intensive applications. The intent is to integrate GaN power switches with CMOS drivers using different integration schemes from the package level up to the chip level including wafer bonding between GaN on Si(111) and CMOS on Si (100) wafers. GaNonCMOS is coordinated by Prof. Jean-Pierre Locquet from the Katholieke Universiteit Leuven (KUL).
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