Power GaN pioneer opens up in China

July 18, 2018 // By Peter Clarke
Navitas Semiconductor Inc. (El Segundo, Calif.), a pioneer of the use of gallium-nitride for power semiconductors, has opened a design center in Hangzhou, China, to help it work with Chinese customers.

Navitas claims that the use of its technology can enable power converter designs that are 50 percent smaller, 50 percent lighter and that can charge mobile applications up to three times faster than silicon-based designs.

"The GaNFast Design Center is staffed with experienced, proven, high-level application engineers, chartered to develop new high-frequency, high-efficiency and high density power systems, and to assist customers to exploit fully the key performance and benefits of GaNFast power ICs," said Michael Xu, senior director of applications and head of the facility, in a statement.

"The Hangzhou location is central to China's academic and innovation hub, with very close links to Zhejiang University and customers' advanced research locations in Shanghai and Suzhou," said Dan Kinzer, Navitas co-founder and CTO, in the same statement.

Related links and articles:

www.navitassemi.com

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