New Schottky diode series offers high-speed switching improvements in battery-powered products

March 21, 2012 // By Paul Buckley
Toshiba Electronics Europe (TEE) has introduced a new series of Schottky barrier diodes (SBDs) aimed at high-speed switching applications in the 500 mA to 1000 mA current range. The new devices use a next generation process for improved forward voltage and reverse current performance, which results in lower losses.

This makes them ideal for use in a variety of applications that are extremely sensitive to energy efficiency. Major application areas are DC-DC conversion or backflow protection in battery charger circuits.
The new class of SBDs is designed for maximum reverse voltages of 30 V and offers typical leakage currents as low as 5 µA. Depending on the maximum current rating of the SBDs the typical forward voltages range from 0.38 V (@I F =500mA) up to 0.43 V (@I F =1000 mA) and the typical diode capacitances range from 120 pF for the 500 mA type to 170 pF for the 1000 mA. As a result these SBDs can significantly reduce power loss in charger circuits or DC-DC converters that are commonly used in battery-powered applications.

The new series comprises the CUSxxF30 family in an SOD323 package featuring three different maximum current ratings. Designers can choose from a 500 mA (xx=05), 800 mA (xx=08) and 1000 mA (xx=10) versions. In addition the 500 mA solution is also available as CBS05F30 – a compact LGA type (CST2B) package. This CST2B package has a footprint of only 1.2 mm x 0.8 mm and a maximum height of 0.4 mm, making it an ideal solution for designs where board space is limited.
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