The devices are aimed at designs for mobile devices, including smart phones, tablets and wearable devices with interfaces including USB 3.0/3.1 and HDMI. The new devices simultaneously deliver low capacitance, low dynamic resistance and high ESD endurance.
The new diodes are fabricated with Toshiba's latest EAP-IV process, which uses proprietary snapback technology. This improves dynamic resistance, which absorbs ESD and noise, by approximately 50 percent compared to Toshiba's existing products. ESD voltage is improved by approximately 75 percent when compared to existing products, which can contribute to system reliability improvements.
This minimises signal distortion of high-speed data signals with a 0.2pF capacitance while a typical dynamic resistance (R DYN) of 0.5Ω ensures low clamping voltages. High ESD protection levels are supported by electrostatic discharge voltages of at least ±20 kV according to IEC61000-4-2.
The continuous growth of data traffic – driven by smart phones, wearables and applications such as virtual reality and the internet of things – has led to increasing numbers of high-speed interfaces that need to be protected from ESD events.The range consists of five products for 3.3V signal lines and five products for 5.0V signal lines, allowing design engineers to select the appropriate match for the interface voltage of their device.
The diodes RE available in three different package sizes to meet mounting space requirements. The small SOD-962 package is suitable for multi-port applications that are expected to grow, such as USB Type-C; the flow-through DFN10 (2.5×1.0mm) package can reduce the inductance of wires; and the SOD-882 (CST2) (1.0×1.6mm) package can contribute to slimmer, smaller devices.