New n-channel power management MOSFET with ultra-low ON resistance saves space and power

May 26, 2011 // By Paul Buckley
Toshiba Electronics Europe (TEE) has added a new n-channel device to its family of low voltage MOSFETs - which is a member of the company's continuously expanding SSM series of small signal MOSFETs – has low loss characteristics that make it ideal for power management in a variety of portable, battery-powered applications.

Using Toshiba’s latest, seventh generation n-channel process technology, the new SSM3K333R MOSFET is optimized for standard voltage switching requirements. The technology exhibits maximum ON resistance (RDS(ON)) values of only 42 mΩ and 28 mΩ with switching voltages of VGS=4.5 V and 10 V, respectively.

As well as low resistance values that enable the low loss operation essential for battery-operated equipment the SSM3K333R is specified for a maximum drain-source voltage (VDSS) of 30 V. As a result the device is also compatible with many industrial power management applications.

Another improvement is the new SOT-23F package, which offers lower thermal resistance against comparable package sizes. The improvement leads to a maximum DC current rating of 6 A and a drain power dissipation capability of 1 W from a package that has dimensions of 2.9 mm x 2.4 mm.

Visit Toshiba Electronics Europe at