New IGBT modules support smaller, more efficient power converters in wind power-generation and PV systems

May 08, 2012 // By Paul Buckley
Mitsubishi Electric Corporation has unveiled the company’s sixth-generation Mega Power Dual (MPD) Series of three insulated-gate bipolar transistor (IGBT) modules.

The modules, which are for use in power converters, mainly those in large-capacity photovoltaic (PV) and wind power-generation systems, also are suitable for high-power applications in large-capacity inverters and uninterruptible power supply (UPS) systems for industrial equipment.

The modules will be showcased at PCIM Europe 2012 in Nuremberg, Germany from May 8-10, 2012.

Power generation systems are increasingly shifting to natural energy sources, such as wind and solar power, as part of efforts to limit carbon dioxide (CO2) emissions attributed to global warming. The sixth-generation MPD Series responds to the growing need for robust power-conversion equipment in newer, large-scale megawatt-class systems.

The new modules enable smaller, more efficient power-conversion equipment with the new modules’ sixth-generation carrier-stored trench-gate bipolar transistor (CSTBT) reducing collector-emitter saturation voltage by approximately 15 percent compared to fifth-generation IGBT modules (CM900DUC-24NF, CM1400DUC-24NF and CM1000DUC-34NF).

The devices feature a gate capacitance reduced by 30–50 percent and a maximum junction temperature raised by 25 to 175°C.

The isolation voltage of new IGBT models isolation voltage is raised by 14–60 percent to 4,000 V compared to the earlier fifth-generation models.  The Sixth-generation MPD Series is RoHS compliant.


The Mega Power Dual (MPD) Series will begin shipping from May 31, 2012  

Visit Mitsubishi Electric at