The reference design uses a highly isolated SiC MOSFET dual-gate driver switch to provide a means for evaluating SiC MOSFETs in a number of topologies. This includes modes optimized for half-bridge switching with synchronous dead time protection and asynchronous signal transfer with no protection. It can also be configured to provide concurrent drive with the requirement to study unclamped inductive switching (UIS) or double pulse testing.
The reference design uses Analog Device’s ADuM4135 5KV isolated gate driver and supports the modification of gate resistor values to accommodate most Microsemi discrete SiC MOSFETs and modules. Microsemi has a module design centre for the technology in Ireland, as does Analog Devices.
“The dual SiC MOSFET driver reference design not only enables Microsemi customers to accelerate their product development efforts, but also accommodates the roll-out of our next-generation SiC MOSFETs to ensure a smooth transition for the end user,” said Jason Chiang, strategic marketing manager for Microsemi. “Customers taking a holistic view at power electronics design can use our new SiC driver solution to select the best driver and components for their designs, with the ability to scale to their specific SiC MOSFET needs.”
The design is aimed at a wide range of end markets and applications, including aerospace for actuation, air conditioning and power distribution, automotive for hybrid/electric vehicle powertrains, electric vehicle battery chargers, DC-to-DC converters, and energy recovery, and defence for power supply and high power motor drive. Microsemi also sees uses in industrial photovoltaic inverters, motor drives, welding, uninterruptible power supply, switched-mode power supply, induction heating and oil drilling as well as medical designs for MRI and X-ray power supplies.
Next: Driver isolation