Isolated gate drivers for SiC MOSFETs for automotive and industrial designs

May 18, 2017 // By Graham Prophet
Rohm Semiconductor has launched a series of isolated gate driver ICs for power MOSFETs for automotive and industrial designs.

The first part in the family is the BM61S40RFV gate driver device specifically designed for Rohm’s SiC power MOSFET with 3.75 kV isolation and AEC-Q100 automotive qualification for  power circuit designs in industrial and automotive applications.

In these devices, Rohm uses proprietary microfabrication processes to build an on-chip coreless transformer for compact, robust and reliable isolated gate drivers that are optimized for SiC technology. The device has an output current of 4A, a built-in active Miller clamp function to prevent parasitic turn-on effects and it integrates an under-voltage lock-out (UVLO) protection – very important safety feature to prevent possible power switch damage due to thermal runaway. Having this function integrated in the gate driver reduces external component count and aids compliance with the requirements of industrial and automotive applications for augmented safety (e.g. in Automotive ASIL-level B/C/D or Industrial SIL2/3/4). The driver also offers better EMI and lower coupling effects. Pin-to-pin compatibility with the prior BM60015FV-LB & BM60016FV-C provides design flexibility and enables future-proof solutions.

To complete the design of the gate driver stage, the BD7F100HFN is a companion IC to implement a compact and proven flyback DCDC converter to power the isolated side of the driver. ROHM offers an evaluation board combining a BD7F100HFN with the new BM61S40RFV gate driver IC.

Specifications

Isolation Voltage: 3750 Vrms

VCC1 Voltage: 4.5~5.5V

VCC2 Voltage: 16~24V

UVLO2 Voltage: 14.5V (TBD)

Operating Temperature: -40~125℃

I/O delay time (max): 60nsec

Delay matching: 20nsec

Output current: 4A

Package: SSOP-B10W (3.50 x 10.20 x 1.9 mm)

Rohm; www.rohm.com/web/eu