The TPW1R306PL has an low typical on resistance (@ VGS = 10V) of 0.95mΩ with a maximum RDS (ON) of 1.29mΩ in a 5 x 6mm form factor. Maximum drain current and power dissipation are 260A and 170W respectively.
The enhanced thermal dissipation provided by the double-sided cooling helps to reduce device count and save space in high-component-density applications such as DC-DC converters, secondary-side circuits of AC-DC power supplies and motor drives in cordless home appliances and power tools. The thermal resistance rating (R th(ch-c) of 0.88k/W) to the top side of the package is significantly lower than that of competitor packages.
Toshiba’s U-MOS IX-H process enables a ‘best-in-class’ trade-off between RDS(ON) and output capacitance/output charge, giving a low typical Q OSS of 77.5nC. This allows designers to further improve system performance and efficiency by raising switching speeds and reducing switching losses.
For more information visit www.toshiba.semicon-storage.com .