700V MOSFET for quasi resonant flyback topologies in thin designs

January 17, 2017 // By Nick Flaherty
Infineon Technologies has launched a new family of MOSFETs to reduce the thickness of equipment using quasi resonant flyback power supplies and chargers.

The 700 CoolMOSP7 technology delivers reduced switching losses (E OSS) from 27 up to 50 percent. In a flyback based charger application the technology leads to up to 3.9 percent higher efficiency, reducing the device temperature by up to 16 K. This compares to the 650V C6 technology that had a 2.4 percent gain in efficiency and 12 K lower device temperature over supeerjunction devices.

The parts are aimed at soft switching topologies such as smart phone and tablet chargers and notebook adapters as well as fast switching and high power density designs for TV adapters, lighting, audio, and aux power with slimdesigns.

The integrated Zener diode ensures an increased ESD ruggedness of up to HBM Class 2 level and an improved assembly yield leads to less production related failures. The 700 V CoolMOS P7 also has low losses from the low RDS (on)*Q g and RDS (on)*E OSS. Compared to C6 technology the new family features an additional extra 50 V blocking voltage.

The technology has been developed with a threshold voltage V GSth of 3V and a very narrow tolerance of ±0.5 V. This makes the new P7 family very easy to design-in and enables the usage of lower gate source voltage, which makes it easier to drive and leads to less idle losses.

The 700 V CoolMOS P7 family is available with the most relevant R DS(on) package combinations including 360 mΩ up to 1400 mΩ in IPAK SL, DPAK and TO-220FP. New package innovations from Infineon will be launched soon.

More information is available at  www.infineon.com/700V-p7