40V and 45V MOSFETs reduce on resistance

March 01, 2017 // By Nick Flaherty
Toshiba Electronics Europe has expanded its range of low-voltage N-channel power MOSFETs with new 40V and 45V devices.


The new devices in the IX-H line - nine 40V and five 45V versions - are designed for industrial and consumer applications, including high-efficiency DC-DC converters, high-efficiency AC-DC converters, power supplies and motor drives.

he new MOSFETs use Toshiba’s latest generation low-voltage trench structure U-MOS IX-H process to deliver a maximum RDS ON(@VGS=10V) from 0.80mΩ to 7.5mΩ.

The new structure lowers the performance index for the RDS ON * Qsw figure of merit, improving switching applications. Output loss is improved by the reduction of the output charge, which can contribute to higher system efficiency. The cell structures used in the new MOSFETs are also optimised to suppress spike voltage and ringing during switching which can help reduce the system EMI.

The main packages for the devices are SOP-Advance 5 x 6mm and TSON-Advance 3x3mm. All the new devices support 4.5V logic-level drives.