As wel as fast chargers, higher performance is demanded for power MOSFETs used in secondary-side rectifiers. The new MOSFETs use Toshiba’s low-voltage trench structure process to achieve low on-resistance down to 4.1mΩ, and the output loss is reduced by a lower output charge (Q sw) of 14 to 21nC, which can contribute to higher efficiency.
Support for 4.5 V logic level drives makes buffer-less drive from the controller IC possible, contributing to reducing power consumption of the system. The MOSFETS also provide the higher output and voltage power supplies required in USB 3.0 related applications and are aimed at fast chargers, switched-mode power supplies and DC-DC converters for servers and communication equipment.
The two new MOSFETs, the TPH4R10ANL and TPH6R30ANL, are in U-MOS VIII-H Series and start shipping today.
More details are on Toshiba's MOSFET site .